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1

Radiation Degradation Modeling of Bipolar Operational Amplifier Input Offset Voltage in LTSpice IV

Bakerenkov, A.S., Pershenkov, V.S., Solomatin, A.V., Belyakov, V.V., Shurenkov, V.V.

Journal:

Applied Mechanics and Materials

Year:

2014

Language:

english

File:

PDF, 273 KB

english, 2014

2

IC’s radiation effects modeling and estimation

V.V Belyakov, A.I Chumakov, A.Y Nikiforov, V.S Pershenkov, P.K Skorobogatov, A.V Sogoyan

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 358 KB

english, 2000

3

X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages

M.N Levin, V.R Gitlin, S.G Kadmensky, S.S Ostrouhov, V.S Pershenkov

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 189 KB

english, 2001

4

Single transistor technique for interface trap density measurement in irradiated MOS devices

V.S Pershenkov, S.V Cherepko, R.E Ivanov, A.V Shalnov, V.V Abramov

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 200 KB

english, 1999

5

Investigation of MOSFET operation in bipolar mode

V.S. Pershenkov, V.V. Belyakov, S.V. Cherepko, I.N. Shvetzov-Shilovsky, V.V. Abramov

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 153 KB

english, 1999

6

X-ray ion mobility spectrometer

V.S. Pershenkov, A.D. Tremasov, V.V. Belyakov, A.U. Razvalyaev, V.S. Mochkin

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 202 KB

english, 2006

7

Use of preliminary ultraviolet and infrared illumination for diagnostics of MOS and bipolar devices radiation response

V.S. Pershenkov, S.V. Avdeev, A.S. Tsimbalov, M.N. Levin, V.V. Belyakov, D.V. Ivashin, A.Y. Slesarev, A.Y. Bashin, G.I. Zebrev, V.N. Ulimov, V.V. Emelianov

Journal:

Microelectronics Reliability

Year:

2002

Language:

english

File:

PDF, 247 KB

english, 2002

8

Prediction of Local and Global Ionization Effects on ICs: The Synergy between Numerical and Physical Simulation

V. V. Belyakov, A. I. Chumakov, A. Y. Nikiforov, V. S. Pershenkov, P. K. Skorobogatov, A. V. Sogoyan

Journal:

Russian Microelectronics

Year:

2003

Language:

english

File:

PDF, 127 KB

english, 2003

9

Modeling the field and thermal dependence of radiation-induced charge annealing in MOS devices

Emelianov, V.V., Sogoyan, A.V., Meshurov, O.V., Ulimov, V.N., Pershenkov, V.S.

Journal:

IEEE Transactions on Nuclear Science

Year:

1996

Language:

english

File:

PDF, 787 KB

english, 1996

10

Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses

Pershenkov, V.S., Ullán, M., Wilder, M., Spieler, H., Spencer, E., Rescia, S., Newcomer, F.M., Martinez-McKinney, F., Kononenko, W., Grillo, A.A., Díez, S.

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 867 KB

english, 2014

11

Effect of Radiation Induced Charge Neutralization on ELDRS

Pershenkov, V.S., Bakerenkov, A.S., Yastrebov, A.T., Solomatin, A.V., Belyakov, V.V., Shurenkov, V.V.

Journal:

Advanced Materials Research

Year:

2014

Language:

english

File:

PDF, 305 KB

english, 2014

12

[IEEE 2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Moscow, Russia (2015.9.14-2015.9.18)] 2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Experimental Technique for Determination of ELDRS-Free Devices

Anashin, Vasily S., Pershenkov, Viacheslav S., Bakerenkov, Alexander S., Chubunov, Pavel A., Solomatin, Anatoly V., Rodin, Alexander S., Felitsyn, Vladislav A.

Year:

2015

Language:

english

File:

PDF, 298 KB

english, 2015

13

[IEEE 2000 22nd International Conference on Microelectronics. Proceedings - Nis, Yugoslavia (14-17 May 2000)] 2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) - Backside chip effect on latent relaxation in irradiated MOS devices

Emelianov, V.V., Meshurov, O.V., Pershenkov, V.S., Cherepko, S.V.

Year:

1999

Language:

english

File:

PDF, 301 KB

english, 1999

14

[IEEE 2016 16th European Conference on Radiation and its Effects on Components and Systems (RADECS) - Bremen (2016.9.19-2016.9.23)] 2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Effect of low-temperature irradiation on ELDRS in bipolar transistors

Bakerenkov, Alexander S., Pershenkov, Viacheslav S., Felitsyn, Vladislav A., Rodin, Alexander S., Telets, Vitaly A., Belyakov, Vladimir V., Shurenkov, Vladimir V., Miroshnichenko, Alina G., Glukhov, N

Year:

2016

Language:

english

File:

PDF, 262 KB

english, 2016

15

Effect of elevated temperature irradiation on bipolar devices for space application

Pershenkov, Viacheslav S., Telets, Vitaliy A., Bakerenkov, Alexander S., Rodin, Alexander S., Felitsyn, Vladislav A., Belyakov, Vladimir V.

Journal:

Radiation Effects and Defects in Solids

Year:

2019

File:

PDF, 1.36 MB

2019

16

Automatic ionization-thermocouple vacuum gage

V. V. Evstifeev, N. M. Krylov, N. M. S'edin, B. L. Svistunov, P. P. Pershenkov

Journal:

Measurement Techniques

Year:

1997

Language:

english

File:

PDF, 154 KB

english, 1997

17

Calculation of surface recombination current in bipolar microelectronic structures subjected to ionizing radiation

V. S. Pershenkov, D. V. Savchenkov, A. S. Bakerenkov, A. S. Egorov

Journal:

Russian Microelectronics

Year:

2009

Language:

english

File:

PDF, 238 KB

english, 2009

18

Conversion model of enhanced low-dose-rate sensitivity for bipolar ICs

V. S. Pershenkov, D. V. Savchenkov, A. S. Bakerenkov, V. N. Ulimov

Journal:

Russian Microelectronics

Year:

2010

Language:

english

File:

PDF, 264 KB

english, 2010

19

Methods for the Prediction of Total-Dose Effects on Modern Integrated Semiconductor Devices in Space: A Review

V. V. Belyakov, V. S. Pershenkov, G. I. Zebrev, A. V. Sogoyan, A. I. Chumakov, A. Y. Nikiforov, P. K. Skorobogatov

Journal:

Russian Microelectronics

Year:

2003

Language:

english

File:

PDF, 118 KB

english, 2003

20

[IEEE 2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Brugge, Belgium (2009.09.14-2009.09.18)] 2009 European Conference on Radiation and Its Effects on Components and Systems - The conversion model of low dose rate effect in bipolar transistors

Pershenkov, V. S., Savchenkov, D. V., Bakerenkov, A. S., Ulimov, V. N., Nikiforov, A. Y., Chumakov, A. I, Romanenko, A. A.

Year:

2009

Language:

english

File:

PDF, 894 KB

english, 2009

21

Fast switched-bias annealing of radiation-induced oxide-trapped charge and its application for testing of radiation effects in MOS structures

Pershenkov, V.S., Belyakov, V.V., Shalnov, A.V.

Journal:

IEEE Transactions on Nuclear Science

Year:

1994

Language:

english

File:

PDF, 714 KB

english, 1994

22

Extracting the fitting parameters for the conversion model of enhanced low dose rate sensitivity in bipolar devices

Bakerenkov, A. S., Belyakov, V. V., Pershenkov, V. S., Romanenko, A. A., Savchenkov, D. V., Shurenkov, V. V.

Journal:

Russian Microelectronics

Year:

2013

Language:

english

File:

PDF, 203 KB

english, 2013

23

Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment

Zebrev, G.I., Pavlov, D.Y., Pershenkov, V.S., Nikiforov, A.Y., Sogoyan, A.V., Boychenko, D.V., Ulimov, V.N., Emelyanov, V.V.

Journal:

IEEE Transactions on Nuclear Science

Year:

2006

Language:

english

File:

PDF, 538 KB

english, 2006

24

Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses

Emelianov, V.V., Zebrev, G.I., Ulimov, V.N., Useinov, R.G., Belyakov, V.V., Pershenkov, V.S.

Journal:

IEEE Transactions on Nuclear Science

Year:

1996

Language:

english

File:

PDF, 474 KB

english, 1996

25

The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices

Pershenkov, V.S., Maslov, V.B., Cherepko, S.V., Shvetzov-Shilovsky, I.N., Belyakov, V.V., Sogoyan, A.V., Rusanovsky, V.I., Ulimov, V.N., Emelianov, V.V., Nasibullin, V.S.

Journal:

IEEE Transactions on Nuclear Science

Year:

1997

Language:

english

File:

PDF, 851 KB

english, 1997

26

[IEEE RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) - Cannes, France (15-19 Sept. 1997)] RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) - The simulation of the low dose-rate radiation effect in bipolar devices

Pershenkov, V.S., Cherepko, S.V., Belyakov, V.V., Abramov, V.V., Rusanovsky, V.I., Sogoyan, A.V., Rogov, V.I., Ulimov, V.N., Emelianov, V.V., Nasibullin, V.S.

Year:

1998

Language:

english

File:

PDF, 320 KB

english, 1998

27

[IEEE RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) - Cannes, France (15-19 Sept. 1997)] RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) - Thermal- and radiation-induced interface traps in MOS devices

Sogoyan, A.V., Cherepko, S.V., Pershenkov, V.S., Rogov, V.I., Ulimov, V.N., Emelianov, V.V.

Year:

1998

Language:

english

File:

PDF, 390 KB

english, 1998

28

Effect of aging on radiation response of bipolar transistors

Pershenkov, V.S., Slesarev, A.Y., Sogoyan, A.V., Belyakov, V.V., Kekukh, V.B., Bashin, A.Y., Ivashin, D.V., Motchkine, V.S., Ulimov, V.N., Emelianov, V.V.

Journal:

IEEE Transactions on Nuclear Science

Year:

2001

Language:

english

File:

PDF, 103 KB

english, 2001

29

Information-Theoretic Method for Hypothesis Testing with Nonsymmetric Distributions

Polosin, V. G., Pershenkov, P. P.

Journal:

Measurement Techniques

Year:

2014

Language:

english

File:

PDF, 188 KB

english, 2014

30

The hydrogenic-electron model of accumulation of surface states on the oxide-semiconductor interface under the effects of ionizing radiation

Sogoyan, A. V., Cherepko, S. V., Pershenkov, V. S.

Journal:

Russian Microelectronics

Year:

2014

Language:

english

File:

PDF, 156 KB

english, 2014

31

[IEEE Third European Conference on Radiation and its Effects on Components and Systems - Arcachon, France (18-22 Sept. 1995)] Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems - Fast techniques for MOSFET response prediction in space environments

Pershenkov, V.S., Belyakov, V.V., Popov, M.Y., Cherepko, S.V., Shvetzov-Shilovsky, I.N.

Year:

1996

Language:

english

File:

PDF, 914 KB

english, 1996

32

[IEEE 1995 International Semiconductor Conference. CAS '95 - Sinaia, Romania (11-14 Oct. 1995)] 1995 International Semiconductor Conference. CAS '95 Proceedings - The effect of radiation-induced reversible switching annealing

Pershenkov, V.S., Belyakov, V.V., Cherepko, S.V., Sogoyan, A.V., Rusanovschi, V.I., Sontea, V.P.

Year:

1995

Language:

english

File:

PDF, 367 KB

english, 1995

33

[IEEE Third European Conference on Radiation and its Effects on Components and Systems - Arcachon, France (18-22 Sept. 1995)] Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems - Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses

Emelianov, V.V., Zebrev, G.I., Ulimov, V.N., Useinov, R.G., Belyakov, V.V., Pershenkov, V.S.

Year:

1996

Language:

english

File:

PDF, 458 KB

english, 1996

34

[IEEE RADECS 2001. 2001 6th European Conference on Radiation and its Effects on Components and Systems - Grenoble, France (10-14 Sept. 2001)] RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605) - MOSFET prediction in space environments taking into account high frequency switched bias response

Shvetzov-Shilovsky, I.N., Pershenkov, V.S., Belyakov, V.V., Zebrev, G.I., Bashin, A.Y., Ivashin, D.V.

Year:

2002

Language:

english

File:

PDF, 290 KB

english, 2002

35

The effect of junction fringing field on radiation-induced leakage current in oxide isolation structures and nonuniform damage near the channel edges in MOSFETs

Pershenkov, V.S., Chirokov, M.S., Bretchko, P.T., Fastenko, P.O., Baev, V.K., Belyakov, V.V.

Journal:

IEEE Transactions on Nuclear Science

Year:

1994

Language:

english

File:

PDF, 578 KB

english, 1994

36

The effect of junction fringing fields on radiation-induced leakage current in oxide isolation structures

Pershenkov, V.S., Chuikin, V.V.

Journal:

IEEE Transactions on Nuclear Science

Year:

1992

Language:

english

File:

PDF, 709 KB

english, 1992

37

Effect of electron traps on reversibility of annealing

Pershenkov, V.S., Belyakov, V.V., Cherepko, S.V., Nikiforov, A.Y., Sogoyan, A.V., Ulimov, V.N., Emelianov, V.V.

Journal:

IEEE Transactions on Nuclear Science

Year:

1995

Language:

english

File:

PDF, 881 KB

english, 1995

38

Three-point method of prediction of MOS device response in space environments

Pershenkov, V.S., Belyakov, V.V., Cherepko, S.V., Shvetzov-Shilovsky, I.N.

Journal:

IEEE Transactions on Nuclear Science

Year:

1993

Language:

english

File:

PDF, 644 KB

english, 1993

39

The improvement of MOSFET prediction in space environments using the conversion model

Shvetzov-Shilovsky, I.N., Cherepko, S.V., Pershenkov, V.S.

Journal:

IEEE Transactions on Nuclear Science

Year:

1994

Language:

english

File:

PDF, 573 KB

english, 1994

40

Use of MOS structures for the investigation of low-dose-rate effects in bipolar transistors

Belyakov, V.V., Pershenkov, V.S., Shalnov, A.V., Shvetzov-Shilovsky, I.N.

Journal:

IEEE Transactions on Nuclear Science

Year:

1995

Language:

english

File:

PDF, 728 KB

english, 1995

41

Temperature control system for the study of single event effects in integrated circuits using a cyclotron accelerator

Bakerenkov, A.S., Belyakov, V.V., Kozyukov, A.E., Pershenkov, V.S., Solomatin, A.V., Shurenkov, V.V.

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

2015

Language:

english

File:

PDF, 995 KB

english, 2015

42

[IEEE 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Oxford, United Kingdom (2013.9.23-2013.9.27)] 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS) - The estimation of long time operation bipolar devices in space environment using conversion model of ELDRS

Pershenkov, V.S., Bakerenkov, A.S., Solomatin, A.V., Belyakov, V.V.

Year:

2013

Language:

english

File:

PDF, 1.22 MB

english, 2013

43

[IEEE 2007 9th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2007) - Deauville, France (2007.09.10-2007.09.14)] 2007 9th European Conference on Radiation and Its Effects on Components and Systems - Interface trap model for the low-dose-rate effect in bipolar devices

Pershenkov, V.S., Chumakov, K.A., Nikiforov, A.Y., Chumakov, A.I., Ulimov, V.N., Romanenko, A.A.

Year:

2007

Language:

english

File:

PDF, 3.78 MB

english, 2007

44

The use of conversion model for CMOS IC prediction in space environments

Shvetzov-Shilovsky, I.N., Belyakov, V.V., Cherepko, S.V., Chumakov, A.I., Emelyanov, V.V., Pershenkov, V.S., Popov, M.Y., Zebrev, G.I.

Journal:

IEEE Transactions on Nuclear Science

Year:

1996

Language:

english

File:

PDF, 856 KB

english, 1996

45

Proposed two-level Acceptor-Donor (AD) center and the nature of switching traps in irradiated MOS structures

Pershenkov, V.S., Cherepko, S.V., Sogoyan, A.V., Belyakov, V.V., Ulimov, V.N., Abramov, V.V., Shalnov, A.V., Rusanovsky, V.I.

Journal:

IEEE Transactions on Nuclear Science

Year:

1996

Language:

english

File:

PDF, 849 KB

english, 1996

46

[IEEE 2005 8th European Conference on Radiation and Its Effects on Components and Systems - Cap d'Agde, France (2005.09.19-2005.09.23)] 2005 8th European Conference on Radiation and Its Effects on Components and Systems - Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment

Zebrev, G. I., Pavlov, D. Y., Pershenkov, V. S., Nikiforov, A. Y., Sogoyan, A. V., Boychenko, D. V., Ulimov, V. N., Emelyanov, V. V.

Year:

2005

Language:

english

File:

PDF, 1.19 MB

english, 2005

47

[IEEE 2006 25th International Conference on Microelectronics - Belgrade, Serbia and Montenegro (14-17 May 2006)] 2006 25th International Conference on Microelectronics - The Electronic and Program Control System of X-Ray Ion Mobility Spectrometer

Pershenkov, V.S., Razvalyaev, A.U., Tremasov, A.D.

Year:

2006

Language:

english

File:

PDF, 397 KB

english, 2006

48

Mechanism of the Saturation of the Radiation Induced Interface Trap Buildup

Pershenkov, V.S., Bakerenkov, A.S., Solomatin, A.V., Belyakov, V.V., Shurenkov, V.V.

Journal:

Applied Mechanics and Materials

Year:

2014

Language:

english

File:

PDF, 269 KB

english, 2014

49

Using Low Temperature Irradiation for ELDRS Estimation

Pershenkov, V.S., Bakerenkov, A.S., Yastrebov, A.T., Solomatin, A.V., Belyakov, V.V., Shurenkov, V.V.

Journal:

Advanced Materials Research

Year:

2014

Language:

english

File:

PDF, 238 KB

english, 2014

50

[IEEE 2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Moscow, Russia (2015.9.14-2015.9.18)] 2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) - The Technique for Estimation of the Chip Temperature of Integrated Circuits during Irradiation

Felitsyn, Vladislav A., Bakerenkov, Alexander S., Pershenkov, Viacheslav S., Rodin, Alexander S., Belyakov, Vladimir V., Shurenkov, Vladimir V., Glukhov, Nikita S.

Year:

2015

Language:

english

File:

PDF, 244 KB

english, 2015